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RB160M-40
Diodes
Schottky barrier diode
RB160M-40
Applications General rectification Dimensions (Unit : mm)
1.60.1 0.10.1 0.05
Land size figure (Unit : mm)
1.2 0.85
2.60.1
3.50.2
Features 1) Small power mold type. (PMDS) 2) Low IR. 3) High reliability.
PMDU
Structure Construction Silicon epitaxial planar
0.90.1
ROHM : PMDU JEDEC :SOD-123 Manufacture Date
0.80.1
Taping specifications (Unit : mm)
4.00.1 2.00.05 1.550.05 1.750.1 0.250.05
3.50.05
8.00.2
1.810.1
4.00.1
1.00.1
3.710.1
1.5MAX
Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz1cyc) Junction temperature Storage temperature
Symbol VRM VR Io IFSM Tj Tstg
Limits 40 40 1 30 150 -40 to +150
Unit V V A A
(*1)Mounted on epoxy board. 180Half sine wave
Electrical characteristics (Ta=25C) Parameter Symbol
Forward voltage Reverse current
VF IR
Min. -
Typ. 0.46 4.0
Max. 0.51 30
Unit V A
Conditions IF=1.0A VR=40V
Rev.D
3.05
1/3
RB160M-40
Diodes
Electrical characteristic curves (Ta=25C)
1000 Ta=75 FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) Ta=125 100 Ta=150 Ta=25 10 Ta=-25
10000
Ta=150 Ta=125
1000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF)
1000 100 10 1 0.1 0.01 0 5 10 15 20 25 30 35 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 40
Ta=75 Ta=25 Ta=-25
100
10
1 0 100 200 300 400 500 600 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS
1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
480 FORWARD VOLTAGE:VF(mV) 470 460 450 AVE:454.3mV 440 430 VF DISPERSION MAP Ta=25 VF=1A n=30pcs
30
REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN TERMINALS:Ct(pF)
300 Ta=25 VR=40V n=30pcs 290 280 270 260 250 240 230 220 210 200 AVE:279.7pF Ta=25 f=1MHz VR=0V n=10pcs
25 20 15 10 5 0
IR DISPERSION MAP AVE:4.08uA
Ct DISPERSION MAP
200
PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 1cyc 8.3ms RESERVE RECOVERY TIME:trr(ns)
30 25 20 15 10 5 0 IFSM DISRESION MAP trr DISPERSION MAP AVE:10.4ns PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs
100 80 60 40 Ifsm 20 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 8.3ms 8.3ms 1cyc
150
100
50
AVE:83.0A
0
200
PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm
1000
Mounted on epoxy board
1
IM=10mA IF=0.5A
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
Rth(j-a)
0.9 0.8 FORWARD POWER DISSIPATION:Pf(W) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Sin(180) DC D=1/2
150
t
100
1ms
time
300us
Rth(j-c) 10
100
50
1
0 0.1 1 10 100
TIME:t(ms) IFSM-t CHARACTERISTICS
0.1
0.001 0.01
TIME:t(s) Rth-t CHARACTERISTICS
0.1
1
10
100
1000
0
0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS
2
Rev.D
2/3
RB160M-40
Diodes
0.05 0.04 REVERSE POWER DISSIPATION:PR (W) 0.03 DC 0.02 0.01 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 40 D=1/2 Sin(180)
3
3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V DC D=1/2 Io t T VR D=t/T VR=20V Tj=150 2.5 2 1.5 D=1/2 1 0.5 0
0 25 50 75 100 125 150
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
2.5
0A 0V DC
Io t T VR D=t/T VR=20V Tj=150
2
1.5
1
0.5
Sin(180)
Sin(180) 0 25 50 75 100 125 150
0
AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta)
CASE TEMPARATURE:Tc() Derating Curve(Io-Tc)
30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 5 AVE:7.30kV 0 C=200pF R=0 C=100pF R=1.5k
ESD DISPERSION MAP
Rev.D
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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